Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD): Fid-Bau Portal

Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)

Hatakeyama, T. / Nishio, J. / Shinohe, T.

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Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)

Hatakeyama, T. / Nishio, J. / Shinohe, T.

Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)

Hatakeyama, T. / Nishio, J. / Shinohe, T.

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Document information

Title:

Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)

Contributors:

Hatakeyama, T. (author) / Nishio, J. (author) / Shinohe, T. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 921-924

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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