Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination

    New search for: Yamamoto, T.
    New search for: Endo, T.
    New search for: Kato, N.
    New search for: Nakamura, H.
    New search for: Sakakibara, T.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination

    New search for: Yamamoto, T.
    New search for: Endo, T.
    New search for: Kato, N.
    New search for: Nakamura, H.
    New search for: Sakakibara, T.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination

    New search for: Yamamoto, T.
    New search for: Endo, T.
    New search for: Kato, N.
    New search for: Nakamura, H.
    New search for: Sakakibara, T.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination

    Contributors:

    Yamamoto, T. (author) / Endo, T. (author) / Kato, N. (author) / Nakamura, H. (author) / Sakakibara, T. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.

    Published in:

    Silicon Carbide and Related Materials 2006 ; 857-860

    MATERIALS SCIENCE FORUM ; 556/557

    Publication date:

    2007-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation

    Vassilevski, K. V. / Horsfall, A. B. / Johnson, C. M. et al. | British Library Online Contents | 2004

    Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias

    Felsl, H. P. / Wachutka, G. | British Library Online Contents | 2002

    Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond

    Zhao, Dan / Liu, Zhangcheng / Wang, Juan et al. | British Library Online Contents | 2018

    Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond

    Zhao, Dan / Liu, Zhangcheng / Wang, Juan et al. | British Library Online Contents | 2018

    Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond

    Zhao, Dan / Liu, Zhangcheng / Wang, Juan et al. | British Library Online Contents | 2018

    Back to top