Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure: Fid-Bau Portal

Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

Matsuo, K. / Negoro, N. / Kotani, J. / Hashizume, T. / Hasegawa, H.

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Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

Matsuo, K. / Negoro, N. / Kotani, J. / Hashizume, T. / Hasegawa, H.

Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

Matsuo, K. / Negoro, N. / Kotani, J. / Hashizume, T. / Hasegawa, H.

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Access via TIB

Check availability in my library

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Document information

Title:

Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

Contributors:

Matsuo, K. (author) / Negoro, N. (author) / Kotani, J. (author) / Hashizume, T. (author) / Hasegawa, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 244 ; 273-276

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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