Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure: Fid-Bau Portal

Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

Harmatha, L. / Lubica, S. / Juraj, R. / Juraj, M. / Juraj, P. / Peter, B. / Michal, N. / Juraj, B.

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Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

Harmatha, L. / Lubica, S. / Juraj, R. / Juraj, M. / Juraj, P. / Peter, B. / Michal, N. / Juraj, B.

Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

Harmatha, L. / Lubica, S. / Juraj, R. / Juraj, M. / Juraj, P. / Peter, B. / Michal, N. / Juraj, B.

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Check availability in my library

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Document information

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Document information

Title:

Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

Contributors:

Harmatha, L. (author) / Lubica, S. (author) / Juraj, R. (author) / Juraj, M. (author) / Juraj, P. (author) / Peter, B. (author) / Michal, N. (author) / Juraj, B. (author)

Published in:

APPLIED SURFACE SCIENCE ; 313 ; 102-106

Publication date:

2014-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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