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Physically based modeling of dislocation loops in ion implantation processing in silicon

Castrillo, P. / Martin-Bragado, I. / Pinacho, R. / Jaraiz, M. / Rubio, J. E. / Mok, K. R. / Miguel-Herrero, F. J. / Barbolla, J.

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Physically based modeling of dislocation loops in ion implantation processing in silicon

Castrillo, P. / Martin-Bragado, I. / Pinacho, R. / Jaraiz, M. / Rubio, J. E. / Mok, K. R. / Miguel-Herrero, F. J. / Barbolla, J.

Physically based modeling of dislocation loops in ion implantation processing in silicon

Castrillo, P. / Martin-Bragado, I. / Pinacho, R. / Jaraiz, M. / Rubio, J. E. / Mok, K. R. / Miguel-Herrero, F. J. / Barbolla, J.

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Title:

Physically based modeling of dislocation loops in ion implantation processing in silicon

Contributors:

Castrillo, P. (author) / Martin-Bragado, I. (author) / Pinacho, R. (author) / Jaraiz, M. (author) / Rubio, J. E. (author) / Mok, K. R. (author) / Miguel-Herrero, F. J. (author) / Barbolla, J. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 404-408

Publication date:

2005-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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