Field effect on electron-hole recombination in Si/Si1−xGex/Si quantum wells having a W-like type II potential profile: Fid-Bau Portal

Field effect on electron-hole recombination in Si/Si1−xGex/Si quantum wells having a W-like type II potential profile

Sfina, N. / Lazzari, J. L. / Said, M.

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Field effect on electron-hole recombination in Si/Si1−xGex/Si quantum wells having a W-like type II potential profile

Sfina, N. / Lazzari, J. L. / Said, M.

Field effect on electron-hole recombination in Si/Si1−xGex/Si quantum wells having a W-like type II potential profile

Sfina, N. / Lazzari, J. L. / Said, M.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Field effect on electron-hole recombination in Si/Si1−xGex/Si quantum wells having a W-like type II potential profile

Contributors:

Sfina, N. (author) / Lazzari, J. L. (author) / Said, M. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -AMSTERDAM THEN LAUSANNE- C ; 26 ; 214-217

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0928-4931

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1 / 660

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