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Dependence of barrier height and effective mass on nitrogen concentration at SiO~xN~y/Si interface and gate oxide thickness
Dependence of barrier height and effective mass on nitrogen concentration at SiO~xN~y/Si interface and gate oxide thickness
Dependence of barrier height and effective mass on nitrogen concentration at SiO~xN~y/Si interface and gate oxide thickness
Ng, C. Y. (author) / Chen, T. P. (author) / Ang, C. H. (author)
SMART MATERIALS AND STRUCTURES ; 15 ; S39-S42
2006-01-01
S39-S42
Article (Journal)
English
DDC:
530
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