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Dependence of barrier height and effective mass on nitrogen concentration at SiO~xN~y/Si interface and gate oxide thickness
Dependence of barrier height and effective mass on nitrogen concentration at SiO~xN~y/Si interface and gate oxide thickness
Dependence of barrier height and effective mass on nitrogen concentration at SiO~xN~y/Si interface and gate oxide thickness
Ng, C. Y. (Autor:in) / Chen, T. P. (Autor:in) / Ang, C. H. (Autor:in)
SMART MATERIALS AND STRUCTURES ; 15 ; S39-S42
01.01.2006
S39-S42
Aufsatz (Zeitschrift)
Englisch
DDC:
530
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