A platform for research: civil engineering, architecture and urbanism
Observation of oxygen contamination at ZnSe/GaAs interfaces using SIMS
Observation of oxygen contamination at ZnSe/GaAs interfaces using SIMS
Observation of oxygen contamination at ZnSe/GaAs interfaces using SIMS
Gard, F. S. (author) / Riley, J. D. (author) / Prince, K. (author)
APPLIED SURFACE SCIENCE ; 252 ; 4013-4015
2006-01-01
3 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Optical and structural properties of ZnSe/GaAs interfaces
British Library Online Contents | 1997
|Structural properties and stability of defected ZnSe/GaAs(001) interfaces
British Library Online Contents | 2005
|Acceptor- and donor-like interfacial states at ZnSe/GaAs heterovalent interfaces
British Library Online Contents | 2002
|Deep level formation and heterojunction band offsets at ZnSe/GaAs interfaces
British Library Online Contents | 1998
|SIMS Studies of Cl-Doped ZnSe Epilayers Grown by MBE
British Library Online Contents | 2006
|