A platform for research: civil engineering, architecture and urbanism
Pinning Fermi Level of p-GaN due to Three Different (Zr, Ti, and Cr) Metal Contact
Pinning Fermi Level of p-GaN due to Three Different (Zr, Ti, and Cr) Metal Contact
Pinning Fermi Level of p-GaN due to Three Different (Zr, Ti, and Cr) Metal Contact
Tan, C. K. (author) / Aziz, A. A. (author) / Hassan, Z. (author) / Yam, F. K. (author) / Lim, C. W. (author) / Hudeish, A. Y. (author)
MATERIALS SCIENCE FORUM ; 517 ; 262-266
2006-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 1993
|Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC
British Library Online Contents | 2000
|Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface
British Library Online Contents | 2019
|On Fermi level pinning in lead telluride based alloys doped with mixed valence impurities
British Library Online Contents | 2002
|