Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC: Fid-Bau Portal

Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC

Skromme, B. J. / Luckowski, E. / Moore, K. / Clemens, S. / Resnick, D. / Gehoski, T. / Ganser, D.

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Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC

Skromme, B. J. / Luckowski, E. / Moore, K. / Clemens, S. / Resnick, D. / Gehoski, T. / Ganser, D.

Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC

Skromme, B. J. / Luckowski, E. / Moore, K. / Clemens, S. / Resnick, D. / Gehoski, T. / Ganser, D.

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Title:

Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC

Contributors:

Skromme, B. J. (author) / Luckowski, E. (author) / Moore, K. (author) / Clemens, S. (author) / Resnick, D. (author) / Gehoski, T. (author) / Ganser, D. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1029-1032

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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