A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps: Fid-Bau Portal

A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

Aroutiounian, V. M. / Avetisyan, G. A. / Buniatyan, V. V. / Soukiassian, P. G.

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A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

Aroutiounian, V. M. / Avetisyan, G. A. / Buniatyan, V. V. / Soukiassian, P. G.

A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

Aroutiounian, V. M. / Avetisyan, G. A. / Buniatyan, V. V. / Soukiassian, P. G.

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Check availability in my library

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Document information

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Document information

Title:

A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

Contributors:

Aroutiounian, V. M. (author) / Avetisyan, G. A. (author) / Buniatyan, V. V. (author) / Soukiassian, P. G. (author)

Published in:

APPLIED SURFACE SCIENCE ; 252 ; 5445-5448

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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