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A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps
A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps
A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps
Aroutiounian, V. M. (Autor:in) / Avetisyan, G. A. (Autor:in) / Buniatyan, V. V. (Autor:in) / Soukiassian, P. G. (Autor:in)
APPLIED SURFACE SCIENCE ; 252 ; 5445-5448
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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