Etching, Raman and PL study of thick HVPE-grown GaN: Fid-Bau Portal

Etching, Raman and PL study of thick HVPE-grown GaN

Weyher, J. L. / Lewandowska, R. / Macht, L. / Lucznik, B. / Grzegory, I.

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Etching, Raman and PL study of thick HVPE-grown GaN

Weyher, J. L. / Lewandowska, R. / Macht, L. / Lucznik, B. / Grzegory, I.

Etching, Raman and PL study of thick HVPE-grown GaN

Weyher, J. L. / Lewandowska, R. / Macht, L. / Lucznik, B. / Grzegory, I.

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Document information

Title:

Etching, Raman and PL study of thick HVPE-grown GaN

Contributors:

Weyher, J. L. (author) / Lewandowska, R. (author) / Macht, L. (author) / Lucznik, B. (author) / Grzegory, I. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 175-179

Publication date:

2006-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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