Temperature dependence of Raman scattering in Si crystals with heavy B and/or Ge doping: Fid-Bau Portal

Temperature dependence of Raman scattering in Si crystals with heavy B and/or Ge doping

Huang, X. / Wu, K. / Chen, M. / Toshinori, T. / Hoshikawa, K. / Koh, S. / Uda, S.

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Temperature dependence of Raman scattering in Si crystals with heavy B and/or Ge doping

Huang, X. / Wu, K. / Chen, M. / Toshinori, T. / Hoshikawa, K. / Koh, S. / Uda, S.

Temperature dependence of Raman scattering in Si crystals with heavy B and/or Ge doping

Huang, X. / Wu, K. / Chen, M. / Toshinori, T. / Hoshikawa, K. / Koh, S. / Uda, S.

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Document information

Title:

Temperature dependence of Raman scattering in Si crystals with heavy B and/or Ge doping

Contributors:

Huang, X. (author) / Wu, K. (author) / Chen, M. (author) / Toshinori, T. (author) / Hoshikawa, K. (author) / Koh, S. (author) / Uda, S. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 257-260

Publication date:

2006-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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