Deep levels in Yb-Al co-doped GaAs grown by liquid phase epitaxy: Fid-Bau Portal

Deep levels in Yb-Al co-doped GaAs grown by liquid phase epitaxy

Kaniewska, M. / Krukovsky, S. I. / Zayachuk, D. M.

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Deep levels in Yb-Al co-doped GaAs grown by liquid phase epitaxy

Kaniewska, M. / Krukovsky, S. I. / Zayachuk, D. M.

Deep levels in Yb-Al co-doped GaAs grown by liquid phase epitaxy

Kaniewska, M. / Krukovsky, S. I. / Zayachuk, D. M.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Deep levels in Yb-Al co-doped GaAs grown by liquid phase epitaxy

Contributors:

Kaniewska, M. (author) / Krukovsky, S. I. (author) / Zayachuk, D. M. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 366-370

Publication date:

2006-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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