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Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy
Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy
Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy
Oh, D. C. (author) / Song, J. S. (author) / Chang, J. H. (author) / Takai, T. (author) / Hanada, T. (author) / Cho, M. W. (author) / Yao, T. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 567-571
2003-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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