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    Luminescence properties of hole traps in homojunction gallium nitride diodes grown by metal organic vapour phase epitaxy

    New search for: Asghar, M.
    New search for: Muret, P.
    New search for: Hussain, I.
    New search for: Beaumont, B.
    New search for: Gibart, P.
    New search for: Shahid, M.

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    Luminescence properties of hole traps in homojunction gallium nitride diodes grown by metal organic vapour phase epitaxy

    New search for: Asghar, M.
    New search for: Muret, P.
    New search for: Hussain, I.
    New search for: Beaumont, B.
    New search for: Gibart, P.
    New search for: Shahid, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Luminescence properties of hole traps in homojunction gallium nitride diodes grown by metal organic vapour phase epitaxy

    New search for: Asghar, M.
    New search for: Muret, P.
    New search for: Hussain, I.
    New search for: Beaumont, B.
    New search for: Gibart, P.
    New search for: Shahid, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Luminescence properties of hole traps in homojunction gallium nitride diodes grown by metal organic vapour phase epitaxy

    Contributors:

    Asghar, M. (author) / Muret, P. (author) / Hussain, I. (author) / Beaumont, B. (author) / Gibart, P. (author) / Shahid, M. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 130 ; 173-176

    Publication date:

    2006-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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