Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure: Fid-Bau Portal

Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure

Jung, I. Y. / Park, Y. M. / Park, Y. J. / Lee, J. I. / Kim, T. W.

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Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure

Jung, I. Y. / Park, Y. M. / Park, Y. J. / Lee, J. I. / Kim, T. W.

Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure

Jung, I. Y. / Park, Y. M. / Park, Y. J. / Lee, J. I. / Kim, T. W.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure

Contributors:

Jung, I. Y. (author) / Park, Y. M. (author) / Park, Y. J. (author) / Lee, J. I. (author) / Kim, T. W. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE ; 41 ; 5036-5039

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0022-2461

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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