Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation: Fid-Bau Portal

Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation

Ee, Y. C. / Chen, Z. / Law, S. B. / Xu, S. / Yakovlev, N. L. / Lai, M. Y.

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Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation

Ee, Y. C. / Chen, Z. / Law, S. B. / Xu, S. / Yakovlev, N. L. / Lai, M. Y.

Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation

Ee, Y. C. / Chen, Z. / Law, S. B. / Xu, S. / Yakovlev, N. L. / Lai, M. Y.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation

Contributors:

Ee, Y. C. (author) / Chen, Z. (author) / Law, S. B. (author) / Xu, S. (author) / Yakovlev, N. L. (author) / Lai, M. Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 253 ; 530-534

Publication date:

2006-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

M. Isabel Sánchez de Rojas / M. Pilar de Luxán / Moisés Frías | DOAJ | 1986

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