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    Carrier mobility and strain effect in heavily doped p-type Si

    New search for: Romano, L.
    New search for: De Bastiani, R.
    New search for: Miccoli, C.
    New search for: Bisognin, G.
    New search for: Napolitani, E.
    New search for: De Salvador, D.
    New search for: Grimaldi, M. G.

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    Carrier mobility and strain effect in heavily doped p-type Si

    New search for: Romano, L.
    New search for: De Bastiani, R.
    New search for: Miccoli, C.
    New search for: Bisognin, G.
    New search for: Napolitani, E.
    New search for: De Salvador, D.
    New search for: Grimaldi, M. G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Carrier mobility and strain effect in heavily doped p-type Si

    New search for: Romano, L.
    New search for: De Bastiani, R.
    New search for: Miccoli, C.
    New search for: Bisognin, G.
    New search for: Napolitani, E.
    New search for: De Salvador, D.
    New search for: Grimaldi, M. G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Carrier mobility and strain effect in heavily doped p-type Si

    Contributors:

    Romano, L. (author) / De Bastiani, R. (author) / Miccoli, C. (author) / Bisognin, G. (author) / Napolitani, E. (author) / De Salvador, D. (author) / Grimaldi, M. G. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 135 ; 220-223

    Publication date:

    2006-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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