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Gallium oxide (Ga2 O3) on gallium arsenide-A low defect, high-K system for future devices
Gallium oxide (Ga2 O3) on gallium arsenide-A low defect, high-K system for future devices
Gallium oxide (Ga2 O3) on gallium arsenide-A low defect, high-K system for future devices
Paterson, G. W. (author) / Wilson, J. A. (author) / Moran, D. (author) / Hill, R. (author) / Long, A. R. (author) / Thayne, I. (author) / Passlack, M. (author) / Droopad, R. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 135 ; 277-281
2006-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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