Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN: Fid-Bau Portal

Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN

Voss, L. / Khanna, R. / Pearton, S. J. / Ren, F. / Kravchenko, I. I.

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Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN

Voss, L. / Khanna, R. / Pearton, S. J. / Ren, F. / Kravchenko, I. I.

Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN

Voss, L. / Khanna, R. / Pearton, S. J. / Ren, F. / Kravchenko, I. I.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN

Contributors:

Voss, L. (author) / Khanna, R. (author) / Pearton, S. J. (author) / Ren, F. (author) / Kravchenko, I. I. (author)

Published in:

APPLIED SURFACE SCIENCE ; 253 ; 1255-1259

Publication date:

2006-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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