Experimental and First-Principles Studies of the Band Alignment at the HfO~2/4H-SiC (0001) Interface: Fid-Bau Portal

Experimental and First-Principles Studies of the Band Alignment at the HfO~2/4H-SiC (0001) Interface

Tanner, C. M. / Choi, J. W. / Chang, J. P.

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Experimental and First-Principles Studies of the Band Alignment at the HfO~2/4H-SiC (0001) Interface

Tanner, C. M. / Choi, J. W. / Chang, J. P.

Experimental and First-Principles Studies of the Band Alignment at the HfO~2/4H-SiC (0001) Interface

Tanner, C. M. / Choi, J. W. / Chang, J. P.

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Check availability in my library

Order at Subito €

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Document information

Title:

Experimental and First-Principles Studies of the Band Alignment at the HfO~2/4H-SiC (0001) Interface

Contributors:

Tanner, C. M. (author) / Choi, J. W. (author) / Chang, J. P. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 1071-1074

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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