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Dynamical Simulation of SiO~2/4H-SiC(0001) Interface Oxidation Process: from First-Principles
Dynamical Simulation of SiO~2/4H-SiC(0001) Interface Oxidation Process: from First-Principles
Dynamical Simulation of SiO~2/4H-SiC(0001) Interface Oxidation Process: from First-Principles
Ohnuma, T. (author) / Miyashita, A. (author) / Iwasawa, M. (author) / Yoshikawa, M. (author) / Tsuchida, H. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.
2007-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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