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Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical Modeling
Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical Modeling
Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical Modeling
Irace, A. (author) / d Alessandro, V. (author) / Breglio, G. (author) / Spirito, P. (author) / Bricconi, A. (author) / Carta, R. (author) / Raffo, D. (author) / Merlin, L. (author) / Devaty, R. P. / Larkin, D. J.
Silicon Carbide and Related Materials - 2005 ; 1151-1154
MATERIALS SCIENCE FORUM ; 527/529
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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