Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical Modeling
Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical Modeling
Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical Modeling
Irace, A. (Autor:in) / d Alessandro, V. (Autor:in) / Breglio, G. (Autor:in) / Spirito, P. (Autor:in) / Bricconi, A. (Autor:in) / Carta, R. (Autor:in) / Raffo, D. (Autor:in) / Merlin, L. (Autor:in) / Devaty, R. P. / Larkin, D. J.
Silicon Carbide and Related Materials - 2005 ; 1151-1154
MATERIALS SCIENCE FORUM ; 527/529
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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