A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
4.3 mOmegacm^2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET
4.3 mOmegacm^2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET
4.3 mOmegacm^2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET
Harada, S. (author) / Kato, M. (author) / Okamoto, M. (author) / Yatsuo, T. (author) / Fukuda, K. (author) / Arai, K. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
Silicon Carbide and Related Materials - 2005 ; 1281-1284
MATERIALS SCIENCE FORUM ; 527/529
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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| TIBKAT | 1998
| TIBKAT | 2006
| UB Braunschweig | 1998
Effect of Y Ion Implantation on Oxidation Behavior of IC6 Alloy at 1100^oC
| British Library Online Contents | 2005
Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET
| British Library Online Contents | 2005