Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs: Fid-Bau Portal

Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs

Noborio, M. / Negoro, Y. / Suda, J. / Kimoto, T.

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Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs

Noborio, M. / Negoro, Y. / Suda, J. / Kimoto, T.

Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs

Noborio, M. / Negoro, Y. / Suda, J. / Kimoto, T.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs

Contributors:

Noborio, M. (author) / Negoro, Y. (author) / Suda, J. (author) / Kimoto, T. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 1305-1308

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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