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Investigation of Lateral RESURF, 6H-SiC MOSFETs

Agarwal, A. K. / Saks, N. S. / Mani, S. S. / Hegde, V. S. / Sanger, P. A.

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Investigation of Lateral RESURF, 6H-SiC MOSFETs

Agarwal, A. K. / Saks, N. S. / Mani, S. S. / Hegde, V. S. / Sanger, P. A.

Investigation of Lateral RESURF, 6H-SiC MOSFETs

Agarwal, A. K. / Saks, N. S. / Mani, S. S. / Hegde, V. S. / Sanger, P. A.

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Check availability in my library

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Document information

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Document information

Title:

Investigation of Lateral RESURF, 6H-SiC MOSFETs

Contributors:

Agarwal, A. K. (author) / Saks, N. S. (author) / Mani, S. S. (author) / Hegde, V. S. (author) / Sanger, P. A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1307-1310

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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