Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs: Fid-Bau Portal

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

Agarwal, A. K. / Krishnaswami, S. / Richmond, J. / Capell, C. / Ryu, S. H. / Palmour, J. / Geil, B. R. / Katsis, D. / Scozzie, C. J. / Stahlbush, R. E.

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Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

Agarwal, A. K. / Krishnaswami, S. / Richmond, J. / Capell, C. / Ryu, S. H. / Palmour, J. / Geil, B. R. / Katsis, D. / Scozzie, C. J. / Stahlbush, R. E.

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

Agarwal, A. K. / Krishnaswami, S. / Richmond, J. / Capell, C. / Ryu, S. H. / Palmour, J. / Geil, B. R. / Katsis, D. / Scozzie, C. J. / Stahlbush, R. E.

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Title:

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

Contributors:

Agarwal, A. K. (author) / Krishnaswami, S. (author) / Richmond, J. (author) / Capell, C. (author) / Ryu, S. H. (author) / Palmour, J. (author) / Geil, B. R. (author) / Katsis, D. (author) / Scozzie, C. J. (author) / Stahlbush, R. E. (author)

Published in:

Silicon Carbide and Related Materials - 2005 ; 1409-1412

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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