A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Current Gain Dependence on Emitter Width in 4H-SiC BJTs
Current Gain Dependence on Emitter Width in 4H-SiC BJTs
Current Gain Dependence on Emitter Width in 4H-SiC BJTs
Domeij, M. (author) / Lee, H. S. (author) / Zetterling, C. M. (author) / Ostling, M. (author) / Schoner, A. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
Silicon Carbide and Related Materials - 2005 ; 1425-1428
MATERIALS SCIENCE FORUM ; 527/529
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Stability of Current Gain in SiC BJTs
| British Library Online Contents | 2014
Current Gain Degradation in 4H-SiC Power BJTs
| British Library Online Contents | 2011
1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance
| British Library Online Contents | 2009
Investigation of Current Gain Degradation in 4H-SiC Power BJTs
| British Library Online Contents | 2012
| British Library Online Contents | 2009