First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs: Fid-Bau Portal

First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs

Agarwal, A. K. / Husna, F. / Haley, J. / Bartlow, H. / McCalpin, B. / Krishnaswami, S. / Capell, C. / Ryu, S. H. / Palmour, J. W.

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First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs

Agarwal, A. K. / Husna, F. / Haley, J. / Bartlow, H. / McCalpin, B. / Krishnaswami, S. / Capell, C. / Ryu, S. H. / Palmour, J. W.

First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs

Agarwal, A. K. / Husna, F. / Haley, J. / Bartlow, H. / McCalpin, B. / Krishnaswami, S. / Capell, C. / Ryu, S. H. / Palmour, J. W.

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Title:

First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs

Contributors:

Agarwal, A. K. (author) / Husna, F. (author) / Haley, J. (author) / Bartlow, H. (author) / McCalpin, B. (author) / Krishnaswami, S. (author) / Capell, C. (author) / Ryu, S. H. (author) / Palmour, J. W. (author) / Devaty, R. P.

Published in:

Silicon Carbide and Related Materials - 2005 ; 1413-1416

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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