A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
Ivanov, P. A. (author) / Levinshtein, M. E. (author) / Agarwal, A. K. (author) / Krishnaswami, S. (author) / Palmour, J. W. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
Silicon Carbide and Related Materials - 2005 ; 1441-1444
MATERIALS SCIENCE FORUM ; 527/529
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Current Gain Degradation in 4H-SiC Power BJTs
| British Library Online Contents | 2011
Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs
| British Library Online Contents | 2004
Stability of Current Gain in SiC BJTs
| British Library Online Contents | 2014
Investigation of Current Gain Degradation in 4H-SiC Power BJTs
| British Library Online Contents | 2012
Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs
| British Library Online Contents | 2010