Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
Ivanov, P. A. (Autor:in) / Levinshtein, M. E. (Autor:in) / Agarwal, A. K. (Autor:in) / Krishnaswami, S. (Autor:in) / Palmour, J. W. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
Silicon Carbide and Related Materials - 2005 ; 1441-1444
MATERIALS SCIENCE FORUM ; 527/529
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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