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Electronic Raman Studies of Shallow Donors in Silicon Carbide

Pusche, R. / Hundhausen, M. / Ley, L. / Semmelroth, K. / Pensl, G. / Desperrier, P. / Wellmann, P. J. / Haller, E. E. / Ager, J. W. / Starke, U.

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Electronic Raman Studies of Shallow Donors in Silicon Carbide

Pusche, R. / Hundhausen, M. / Ley, L. / Semmelroth, K. / Pensl, G. / Desperrier, P. / Wellmann, P. J. / Haller, E. E. / Ager, J. W. / Starke, U.

Electronic Raman Studies of Shallow Donors in Silicon Carbide

Pusche, R. / Hundhausen, M. / Ley, L. / Semmelroth, K. / Pensl, G. / Desperrier, P. / Wellmann, P. J. / Haller, E. E. / Ager, J. W. / Starke, U.

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Document information

Title:

Electronic Raman Studies of Shallow Donors in Silicon Carbide

Contributors:

Pusche, R. (author) / Hundhausen, M. (author) / Ley, L. (author) / Semmelroth, K. (author) / Pensl, G. (author) / Desperrier, P. (author) / Wellmann, P. J. (author) / Haller, E. E. (author) / Ager, J. W. (author) / Starke, U. (author)

Published in:

Silicon Carbide and Related Materials - 2005 ; 579-584

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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