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Vacancy-dioxygen centers in Si-rich SiGe alloys

Khirunenko, L. I. / Pomozov, Y. V. / Sosnin, M. G. / Trypachko, M. O. / Torres, V. J. / Coutinho, J. / Jones, R. / Briddon, P. R. / Abrosimov, N. V. / Riemann, H.

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Vacancy-dioxygen centers in Si-rich SiGe alloys

Khirunenko, L. I. / Pomozov, Y. V. / Sosnin, M. G. / Trypachko, M. O. / Torres, V. J. / Coutinho, J. / Jones, R. / Briddon, P. R. / Abrosimov, N. V. / Riemann, H.

Vacancy-dioxygen centers in Si-rich SiGe alloys

Khirunenko, L. I. / Pomozov, Y. V. / Sosnin, M. G. / Trypachko, M. O. / Torres, V. J. / Coutinho, J. / Jones, R. / Briddon, P. R. / Abrosimov, N. V. / Riemann, H.

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Title:

Vacancy-dioxygen centers in Si-rich SiGe alloys

Contributors:

Khirunenko, L. I. (author) / Pomozov, Y. V. (author) / Sosnin, M. G. (author) / Trypachko, M. O. (author) / Torres, V. J. (author) / Coutinho, J. (author) / Jones, R. (author) / Briddon, P. R. (author) / Abrosimov, N. V. (author) / Riemann, H. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 520-524

Publication date:

2006-01-01

Size:

5 pages

ISSN:

Type of media:

Article (Journal)

Type of material:

Print

Language:

English

Classification:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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