A platform for research: civil engineering, architecture and urbanism
Divacancy-related complexes in Si(1-x)Ge(x)
Divacancy-related complexes in Si(1-x)Ge(x)
Divacancy-related complexes in Si(1-x)Ge(x)
Khirunenko, L. I. (author) / Pomozov, Y. V. (author) / Sosnin, M. G. (author) / Trypachko, M. O. (author) / Duvanskii, A. V. (author) / Abrosimov, N. V. (author) / Riemann, H. (author) / Lastovskii, S. B. (author) / Murin, L. I. (author) / Markevich, V. P. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 525-530
2006-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Divacancy and Its Identification: Theory
British Library Online Contents | 2006
|Theory of Neutral Divacancy in SiC: A Defect for Spintronics
British Library Online Contents | 2010
|Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
British Library Online Contents | 2006
|Positron-Annihilation 2D-ACAR Study of Divacancy and Vacancy-Oxygen Pairs in Si
British Library Online Contents | 1995
|First Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit Application
British Library Online Contents | 2014
|