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Growth of epitaxial Pr2O3 layers on Si(111)

Jeutter, N. M. / Hennemeyer, M. / Stark, R. / Stierle, A. / Moritz, W.

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Growth of epitaxial Pr2O3 layers on Si(111)

Jeutter, N. M. / Hennemeyer, M. / Stark, R. / Stierle, A. / Moritz, W.

Growth of epitaxial Pr2O3 layers on Si(111)

Jeutter, N. M. / Hennemeyer, M. / Stark, R. / Stierle, A. / Moritz, W.

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Document information

Title:

Growth of epitaxial Pr2O3 layers on Si(111)

Contributors:

Jeutter, N. M. (author) / Hennemeyer, M. (author) / Stark, R. (author) / Stierle, A. (author) / Moritz, W. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 1079-1083

Publication date:

2006-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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