Built-in electric field effect on hydrogenic impurity in wurtzite GaN/AlGaN quantum dot: Fid-Bau Portal

Built-in electric field effect on hydrogenic impurity in wurtzite GaN/AlGaN quantum dot

Xia, C. X. / Wei, S. Y. / Zhao, X.

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Built-in electric field effect on hydrogenic impurity in wurtzite GaN/AlGaN quantum dot

Xia, C. X. / Wei, S. Y. / Zhao, X.

Built-in electric field effect on hydrogenic impurity in wurtzite GaN/AlGaN quantum dot

Xia, C. X. / Wei, S. Y. / Zhao, X.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Built-in electric field effect on hydrogenic impurity in wurtzite GaN/AlGaN quantum dot

Contributors:

Xia, C. X. (author) / Wei, S. Y. (author) / Zhao, X. (author)

Published in:

APPLIED SURFACE SCIENCE ; 253 ; 5345-5348

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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