Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes: Fid-Bau Portal

Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes

Loh, W. S. / Johnson, C. M. / Ng, J. S. / Sandvik, P. / Arthur, S. / Soloviev, S. / David, J. P. R.

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Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes

Loh, W. S. / Johnson, C. M. / Ng, J. S. / Sandvik, P. / Arthur, S. / Soloviev, S. / David, J. P. R.

Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes

Loh, W. S. / Johnson, C. M. / Ng, J. S. / Sandvik, P. / Arthur, S. / Soloviev, S. / David, J. P. R.

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Title:

Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes

Contributors:

Loh, W. S. (author) / Johnson, C. M. (author) / Ng, J. S. (author) / Sandvik, P. (author) / Arthur, S. (author) / Soloviev, S. (author) / David, J. P. R. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K.

Published in:

Silicon Carbide and Related Materials 2006 ; 339-342

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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