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OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients
OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients
OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients
Nguyen, D.M. (author) / Raynaud, C. (author) / Lazar, M. (author) / Paques, G. (author) / Scharnholz, S. (author) / Dheilly, N. (author) / Tournier, D. (author) / Planson, D. (author)
MATERIALS SCIENCE FORUM ; 717/720 ; 545-548
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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