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    Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC

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    Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC

    New search for: Gallstrom, A.
    New search for: Magnusson, B.
    New search for: Carlsson, P.
    New search for: Son, N. T.
    New search for: Henry, A.
    New search for: Beyer, F.
    New search for: Syvajarvi, M.
    New search for: Yakimova, R.
    New search for: Janzen, E.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

    Access

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    Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC

    New search for: Gallstrom, A.
    New search for: Magnusson, B.
    New search for: Carlsson, P.
    New search for: Son, N. T.
    New search for: Henry, A.
    New search for: Beyer, F.
    New search for: Syvajarvi, M.
    New search for: Yakimova, R.
    New search for: Janzen, E.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

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    Document information
    Title:

    Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC

    Contributors:

    Gallstrom, A. (author) / Magnusson, B. (author) / Carlsson, P. (author) / Son, N. T. (author) / Henry, A. (author) / Beyer, F. (author) / Syvajarvi, M. (author) / Yakimova, R. (author) / Janzen, E. (author) / Wright, N.

    Published in:

    Silicon Carbide and Related Materials 2006 ; 371-374

    MATERIALS SCIENCE FORUM ; 556/557

    Publication date:

    2007-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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