Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films: Fid-Bau Portal

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

Yoon, S. M. / Choi, K. J. / Lee, N. Y. / Lee, S. Y. / Park, Y. S. / Yu, B. G.

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Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

Yoon, S. M. / Choi, K. J. / Lee, N. Y. / Lee, S. Y. / Park, Y. S. / Yu, B. G.

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

Yoon, S. M. / Choi, K. J. / Lee, N. Y. / Lee, S. Y. / Park, Y. S. / Yu, B. G.

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Title:

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

Contributors:

Yoon, S. M. (author) / Choi, K. J. (author) / Lee, N. Y. (author) / Lee, S. Y. (author) / Park, Y. S. (author) / Yu, B. G. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 316-320

Publication date:

2007-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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