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New approach of Nano-Selective Area Growth (NSAG) for a precise control of GaN nanodots grown by MOVPE
New approach of Nano-Selective Area Growth (NSAG) for a precise control of GaN nanodots grown by MOVPE
New approach of Nano-Selective Area Growth (NSAG) for a precise control of GaN nanodots grown by MOVPE
Martin, J. (author) / Martinez, A. (author) / Goh, W. H. (author) / Gautier, S. (author) / Dupuis, N. (author) / Le Gratiet, L. (author) / Decobert, J. (author) / Ramdane, A. (author) / Maloufi, N. (author) / Ougazzaden, A. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 147 ; 114-117
2008-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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