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    Influence of interface states and deep levels on output characteristics of InAlAs/InGaAs/InP HEMTs

    New search for: Bouzgarrou, S.
    New search for: Sghaier, N.
    New search for: Ben Salem, M. M.
    New search for: Souifi, A.
    New search for: Kalboussi, A.

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    Influence of interface states and deep levels on output characteristics of InAlAs/InGaAs/InP HEMTs

    New search for: Bouzgarrou, S.
    New search for: Sghaier, N.
    New search for: Ben Salem, M. M.
    New search for: Souifi, A.
    New search for: Kalboussi, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Influence of interface states and deep levels on output characteristics of InAlAs/InGaAs/InP HEMTs

    New search for: Bouzgarrou, S.
    New search for: Sghaier, N.
    New search for: Ben Salem, M. M.
    New search for: Souifi, A.
    New search for: Kalboussi, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Influence of interface states and deep levels on output characteristics of InAlAs/InGaAs/InP HEMTs

    Contributors:

    Bouzgarrou, S. (author) / Sghaier, N. (author) / Ben Salem, M. M. (author) / Souifi, A. (author) / Kalboussi, A. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -AMSTERDAM THEN LAUSANNE- C ; 28 ; 676-679

    Publication date:

    2008-01-01

    Size:

    4 pages

    ISSN:

    0928-4931

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.1 / 660

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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