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Characterization of phosphorus-doped homoepitaxial (100) diamond films grown using high-power-density MWPCVD method with a conventional quartz-tube chamber
Characterization of phosphorus-doped homoepitaxial (100) diamond films grown using high-power-density MWPCVD method with a conventional quartz-tube chamber
Characterization of phosphorus-doped homoepitaxial (100) diamond films grown using high-power-density MWPCVD method with a conventional quartz-tube chamber
APPLIED SURFACE SCIENCE ; 254 ; 6281-6284
2008-01-01
4 pages
Article (Journal)
English
DDC:
621.35
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