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    Homoepitaxial (111) diamond grown by temperature-controlled chemical vapor deposition

    New search for: Nishitani-Gamo, M.
    New search for: Sakaguchi, I.
    New search for: Takami, T.
    New search for: Suzuki, K.
    New search for: Kusunoki, I.
    New search for: Ando, T.

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    Homoepitaxial (111) diamond grown by temperature-controlled chemical vapor deposition

    New search for: Nishitani-Gamo, M.
    New search for: Sakaguchi, I.
    New search for: Takami, T.
    New search for: Suzuki, K.
    New search for: Kusunoki, I.
    New search for: Ando, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Homoepitaxial (111) diamond grown by temperature-controlled chemical vapor deposition

    New search for: Nishitani-Gamo, M.
    New search for: Sakaguchi, I.
    New search for: Takami, T.
    New search for: Suzuki, K.
    New search for: Kusunoki, I.
    New search for: Ando, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Homoepitaxial (111) diamond grown by temperature-controlled chemical vapor deposition

    Contributors:

    Nishitani-Gamo, M. (author) / Sakaguchi, I. (author) / Takami, T. (author) / Suzuki, K. (author) / Kusunoki, I. (author) / Ando, T. (author)

    Published in:

    JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 14 ; 3518-3524

    Publication date:

    1999-01-01

    Size:

    7 pages

    ISSN:

    0884-2914

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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