Formation and escaping of positronium in porous SiO2 films at low temperature: Fid-Bau Portal

Formation and escaping of positronium in porous SiO2 films at low temperature

Mariazzi, S. / Toniutti, L. / Patel, N. / Brusa, R. S.

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Formation and escaping of positronium in porous SiO2 films at low temperature

Mariazzi, S. / Toniutti, L. / Patel, N. / Brusa, R. S.

Formation and escaping of positronium in porous SiO2 films at low temperature

Mariazzi, S. / Toniutti, L. / Patel, N. / Brusa, R. S.

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Check availability in my library

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Document information

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Document information

Title:

Formation and escaping of positronium in porous SiO2 films at low temperature

Contributors:

Mariazzi, S. (author) / Toniutti, L. (author) / Patel, N. (author) / Brusa, R. S. (author)

Published in:

APPLIED SURFACE SCIENCE ; 255 ; 191-193

Publication date:

2008-01-01

Size:

3 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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