The effect of additional Si and SiGe layers on the confinement potential of GeMn diluted ferromagnetic semiconductor: Fid-Bau Portal

The effect of additional Si and SiGe layers on the confinement potential of GeMn diluted ferromagnetic semiconductor

Rodrigues, S. C. / Araujo, Y. R. / Sipahi, G. M. / Scolfaro, L. M. / da Silva, E. F.

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The effect of additional Si and SiGe layers on the confinement potential of GeMn diluted ferromagnetic semiconductor

Rodrigues, S. C. / Araujo, Y. R. / Sipahi, G. M. / Scolfaro, L. M. / da Silva, E. F.

The effect of additional Si and SiGe layers on the confinement potential of GeMn diluted ferromagnetic semiconductor

Rodrigues, S. C. / Araujo, Y. R. / Sipahi, G. M. / Scolfaro, L. M. / da Silva, E. F.

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Title:

The effect of additional Si and SiGe layers on the confinement potential of GeMn diluted ferromagnetic semiconductor

Contributors:

Rodrigues, S. C. (author) / Araujo, Y. R. (author) / Sipahi, G. M. (author) / Scolfaro, L. M. (author) / da Silva, E. F. (author)

Published in:

APPLIED SURFACE SCIENCE ; 255 ; 709-711

Publication date:

2008-01-01

Size:

3 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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